The dielectric properties of low temperature thermally cross-linked polystyrene and poly(methylmethacrylate) thin films

被引:9
作者
Li, Shengxia [1 ]
Zhang, Qing [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Chem & Chem Engn, Dept Polymer Sci & Engn, Shanghai Key Lab Polymer & Elect Insulat, Shanghai 200240, Peoples R China
基金
国家教育部博士点专项基金资助; 中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; POLYMER GATE DIELECTRICS; ORGANIC TRANSISTORS; HIGH-PERFORMANCE; LINKING; DESIGN; SURFACE;
D O I
10.1039/c5ra00848d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two azide functionalized polymers were synthesized by free radical copolymerization. Each new polymer was effectively cross-linked with a small molecule cross-linker by a thermally activated reaction at 100 degrees C. This cross-linking method was compatible with plastic substrates for flexible electronic applications. The new method did not use any catalyst and initiator, and did not produce any by-product which could stay in the dielectric layer. The cross-linked thin-films showed good solvent resistance and smooth surfaces. The dielectric characteristics of the cross-linked polymer films were evaluated via quantitative capacitance and leakage current measurements in a metal-insulator-metal (MIM) test structure. The cross-linked thin-films showed significantly reduced leakage current density compared with uncross-linked thin-films in MIM testing devices.
引用
收藏
页码:28980 / 28984
页数:5
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