Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

被引:19
作者
Gilbert, Dustin A. [1 ,2 ]
Gabriel Ramirez, Juan [3 ]
Saerbeck, T. [4 ]
Trastoy, J. [5 ]
Schuller, Ivan K. [5 ]
Liu, Kai [1 ]
de la Venta, J. [6 ]
机构
[1] Univ Calif Davis, Phys Dept, Davis, CA 95616 USA
[2] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
[3] Univ Los Andes, Dept Phys, Bogota 111711, Colombia
[4] Inst Laue Langevin, 71 Av Martyrs,CS 20156, F-38042 Grenoble 9, France
[5] Univ Calif San Diego, Phys Dept, La Jolla, CA 92093 USA
[6] Colorado State Univ, Phys Dept, Ft Collins, CO 80523 USA
基金
美国国家科学基金会;
关键词
EXCHANGE; TRANSITION;
D O I
10.1038/s41598-017-12690-z
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.
引用
收藏
页数:9
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