Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

被引：19

作者：

Gilbert, Dustin A. ^{[1
,2
]}

Gabriel Ramirez, Juan ^{[3
]}

Saerbeck, T. ^{[4
]}

Trastoy, J. ^{[5
]}

Schuller, Ivan K. ^{[5
]}

Liu, Kai ^{[1
]}

de la Venta, J. ^{[6
]}

机构：

[1] Univ Calif Davis, Phys Dept, Davis, CA 95616 USA

[2] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA

[3] Univ Los Andes, Dept Phys, Bogota 111711, Colombia

[4] Inst Laue Langevin, 71 Av Martyrs,CS 20156, F-38042 Grenoble 9, France

[5] Univ Calif San Diego, Phys Dept, La Jolla, CA 92093 USA

[6] Colorado State Univ, Phys Dept, Ft Collins, CO 80523 USA

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

美国国家科学基金会;

关键词：

EXCHANGE; TRANSITION;

D O I：

10.1038/s41598-017-12690-z

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.

引用

页数：9

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