High-Reliability RF-MEMS Switched Capacitors With Digital and Analog Tuning Characteristics

被引：26

作者：

Grichener, Alex ^{[1
]}

Rebeiz, Gabriel M. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 10期

关键词：

Reconfigurable network; reliability; RF microelectromechanical systems (MEMS); tunable capacitor; tunable filter;

D O I：

10.1109/TMTT.2010.2065892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an RF microelectromechanical system switched-capacitor suitable for tunable filters and reconfigurable networks. The switched-capacitor results in a digital capacitance ratio of 5 and an analog capacitance ratio of 5-9. The analog tuning of the down-state capacitance is enhanced by a positive vertical stress gradient in the the beam, making it ideal for applications that require precision tuning. A thick electroplated beam (4-4.5 mu m) results in Q greater than 100 at C-X-band frequencies, switching times of 30-50 mu s, and power handling of 0.6-1.1 W. The design also minimizes charging in the dielectric, resulting in excellent reliability performance even under hot-switched and high-power (1 W) conditions.

引用

页码：2692 / 2701

页数：10

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