On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

被引：88

作者：

Dai, Qi ^{[1
,2
]}

Shan, Qifeng ^{[1
,2
]}

Cho, Jaehee ^{[1
,2
]}

Schubert, E. Fred ^{[1
,2
]}

Crawford, Mary H. ^{[3
]}

Koleske, Daniel D. ^{[3
]}

Kim, Min-Ho ^{[4
]}

Park, Yongjo ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] Samsung LED, R&D Inst, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

D O I：

10.1063/1.3544584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The internal quantum efficiency (IQE)-versus-carrier-concentration (n) curves of GaN-based light-emitting diodes have been frequently described by the ABC model: IQE=Bn-2/(An+Bn-2 +Cn(3)). We show that this model predicts IQE-versus-n curves that have even symmetry. Phase-space filling makes the B and C coefficients concentration-dependent. We also show that IQE-versus-n curves that take into account phase-space filling possess even symmetry. In contrast, experimental IQE-versus-n curves exhibit asymmetry. The asymmetry requires a fourth-power or higher-power contribution to the recombination rate and provides insight into the mathematical form of the droop-causing mechanisms. (c) 2011 American Institute of Physics. [doi:10.1063/1.3544584]

引用

页数：3

共 17 条

[11] Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics [J].

Ryu, H. Y. ;

Ha, K. H. ;

Son, J. K. ;

Lee, S. N. ;

Paek, H. S. ;

Jang, T. ;

Sung, Y. J. ;

Kim, K. S. ;

Kim, H. K. ;

Park, Y. ;

Nam, O. H. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[12] Rate equation analysis of efficiency droop in InGaN light-emitting diodes [J].

Ryu, Han-Youl ;

Kim, Hyun-Sung ;

Shim, Jong-In .

APPLIED PHYSICS LETTERS, 2009, 95 (08)

[13] Analysis of thermal properties of GaInN light-emitting diodes and laser diodes [J].

Shan, Qifeng ;

Dai, Qi ;

Chhajed, Sameer ;

Cho, Jaehee ;

Schubert, E. Fred .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)

[14] Auger recombination in InGaN measured by photoluminescence [J].

Shen, Y. C. ;

Mueller, G. O. ;

Watanabe, S. ;

Gardner, N. F. ;

Munkholm, A. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (14)

[15] Measurement of electron overflow in 450 nm InGaN light-emitting diode structures [J].

Vampola, Kenneth J. ;

Iza, Michael ;

Keller, Stacia ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS LETTERS, 2009, 94 (06)

[16] On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers [J].

Xie, Jinqiao ;

Ni, Xianfeng ;

Fan, Qian ;

Shimada, Ryoko ;

Ozgur, Umit ;

Morkoc, Hadis .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[17] Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes [J].

Zhang, M. ;

Bhattacharya, P. ;

Singh, J. ;

Hinckley, J. .

APPLIED PHYSICS LETTERS, 2009, 95 (20)

← 1 2 →