On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

被引：88

作者：

Dai, Qi ^{[1
,2
]}

Shan, Qifeng ^{[1
,2
]}

Cho, Jaehee ^{[1
,2
]}

Schubert, E. Fred ^{[1
,2
]}

Crawford, Mary H. ^{[3
]}

Koleske, Daniel D. ^{[3
]}

Kim, Min-Ho ^{[4
]}

Park, Yongjo ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] Samsung LED, R&D Inst, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

D O I：

10.1063/1.3544584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The internal quantum efficiency (IQE)-versus-carrier-concentration (n) curves of GaN-based light-emitting diodes have been frequently described by the ABC model: IQE=Bn-2/(An+Bn-2 +Cn(3)). We show that this model predicts IQE-versus-n curves that have even symmetry. Phase-space filling makes the B and C coefficients concentration-dependent. We also show that IQE-versus-n curves that take into account phase-space filling possess even symmetry. In contrast, experimental IQE-versus-n curves exhibit asymmetry. The asymmetry requires a fourth-power or higher-power contribution to the recombination rate and provides insight into the mathematical form of the droop-causing mechanisms. (c) 2011 American Institute of Physics. [doi:10.1063/1.3544584]

引用

页数：3

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