Transient Characteristics for Proton Gating in Laterally Coupled Indium-Zinc-Oxide Transistors

被引：22

作者：

Liu, Ning ^{[1
]}

Zhu, Li Qiang ^{[1
]}

Xiao, Hui ^{[1
]}

Wan, Chang Jin ^{[1
]}

Liu, Yang Hui ^{[1
]}

Chao, Jin Yu ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

来源：

ACS APPLIED MATERIALS & INTERFACES | 2015年 / 7卷 / 11期

基金：

中国国家自然科学基金;

关键词：

proton gating; laterally coupling; interfacial electric-double layer (EDL); transient characteristics; THIN-FILM TRANSISTORS; SUPERCONDUCTIVITY; MECHANISMS;

D O I：

10.1021/acsami.5b00327

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The control and detection over processing, transport and delivery of chemical species is of great importance in sensors and biological systems. The transient characteristics of the migration of chemical species reflect the basic properties in the processings of chemical species. Here, we observed the field-configurable proton effects in a laterally coupled transistor gated by phosphorosilicate glass (PSG). The bias on the lateral gate would 0 5 modulate the interplay between protons and electrons at the PSG/indium-zinc-oxide (IZO) channel interface. Due to the modulation of protons flux within the PSG films, the IZO channel current would be modified correspondingly. The characteristic time for the proton gating is estimated to be on the order of 20 ms. Such laterally coupled oxide based transistors with proton gating are promising for low-cost portable biosensors and neuromorphic system applications.

引用

页码：6205 / 6210

页数：6

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