Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes

被引：7

作者：

Kim, Junmo ^{[1
,4
]}

Hwang, Jeong Ha ^{[2
]}

Kwon, Yong Woo ^{[3
]}

Bae, Hyeong Woo ^{[3
]}

An, Myungchan ^{[3
]}

Lee, Wonho ^{[1
,4
]}

Lee, Donggu ^{[2
]}

机构：

[1] Kumoh Natl Inst Technol, Dept Polymer Sci & Engn, 61 Daehak Ro, Gumi 39177, Gyeongbuk, South Korea

[2] Gyeongsang Natl Univ, Dept Semicond Engn, 501 Jinju daero, Junju Si 52828, Gyeongsangnam D, South Korea

[3] Gumi Elect & Informat Technol Res Inst, Realist Media Res Ctr, 350-27 Gumidaero, Gumi 39253, Gyeongbuk, South Korea

[4] Kumoh Natl Inst Technol, Dept Energy Engn Convergence, 61 Daehak Ro, Gumi 39177, Gyeongbuk, South Korea

来源：

ORGANIC ELECTRONICS | 2021年 / 97卷

基金：

新加坡国家研究基金会;

关键词：

SiNx; Thin film encapsulation; Hydrogen; Top-emission organic light-emitting diode (TEOLED); Low-temperature plasma-enhanced chemical vapor deposition (PECVD); SINX FILMS; DEVICES; PECVD; PERFORMANCE; DEGRADATION;

D O I：

10.1016/j.orgel.2021.106261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we developed a single high-performance SiNx encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 degrees C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 x 10(-5) g/m(2).day. To verify the stability of the PECVD process, we applied the SiNx encapsulation layer directly to top-emitting organic lightemitting diodes. The results showed minor changes in the current-density-voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.

引用

页数：6

共 26 条

[1] Organic materials for printed electronics [J].