Spin disorder effect in anomalous Hall effect in MnGa

被引：5

作者：

Mendonca, A. P. A. ^{[1
]}

Varalda, J. ^{[1
]}

Schreiner, W. H. ^{[1
]}

Mosca, D. H. ^{[1
]}

机构：

[1] Univ Fed Parana, Dept Fis, Lab Nanoestruturas Sensores, Caixa Postal 19044, BR-81531990 Curitiba, Parana, Brazil

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 443卷

关键词：

Mn-Ga alloys; Anomalous Hall effect; Spin-dependent scattering; Berry curvature; MAGNETOCRYSTALLINE ANISOTROPY; MAGNETIC-PROPERTIES; PHASE; FILMS; GROWTH;

D O I：

10.1016/j.jmmm.2017.07.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L1(0) structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Omega cm) (1) comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：165 / 170

页数：6

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