Effect of ambient on 4H-SiC bulk crystals grown by sublimation

被引：0
|
作者：
Ciechonski, RR [1 ]
Yakimova, R [1 ]
Syväjärvi, M [1 ]
Janzén, E [1 ]
机构：
[1] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
boron; bulk growth; cathodoluminescence; doping; tantalum;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sublimation bulk growth in vacuum using graphite crucibles and such with tantalum shielding of the crucible walls has been studied. Residual nitrogen, aluminum and boron doping in the material grown in vacuum is presented. Activation energies of growth rate in respect to growth temperature in vacuum are deduced. The estimated values are 21 kcal/mole for growth temperatures below 2075degreesC and 128 kcal/mole in the range of growth temperatures between 2075degreesC and 2275degreesC. Cathodoluminescence spectra taken from samples grown in the graphite crucible in absence of tantalum under different pressures show nitrogen-aluminum DAP transition and strong luminescence from deep boron. This is not the case for samples grown in the tantalum environment.
引用
收藏
页码：75 / 78
页数：4
相关论文
共 50 条
  • [21] Structural improvement in sublimation epitaxy of 4H-SiC
    Syväjärvi, M
    Yakimova, R
    Jacobsson, H
    Janzén, E
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (03) : 1407 - 1411
  • [22] Free growth of 4H-SiC by sublimation method
    Dedulle, JM
    Anikin, M
    Pons, M
    Blanquet, E
    Pisch, A
    Madar, R
    Bernard, C
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 71 - 74
  • [23] Enhanced carrier lifetime in bulk-grown 4H-SiC substrates
    Jenny, J. R.
    Malta, D. P.
    Tsvetkov, V. T.
    Das, M. K.
    Hobgood, H. McD.
    Carter, C. H., Jr.
    Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 31 - 34
  • [24] Polytype inclusions and triangular stacking faults in 4H-SiC layers grown by sublimation epitaxy
    Syväjärvi, M
    Yakimova, R
    Henry, A
    Janzén, E
    PHYSICA SCRIPTA, 1999, T79 : 64 - 66
  • [25] Electrical properties of undoped 6H-and 4H-SiC bulk crystals grown by halide chemical vapor deposition
    Chung, H. J.
    Huh, S. W.
    Polyakov, A. Y.
    Nigam, S.
    Li, Q.
    Grim, J.
    Skowronski, M.
    Glaser, E. R.
    Carlos, W. E.
    Freitas, J. A.
    Fanton, M. A.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 625 - 628
  • [26] Polytype Inclusions and Triangular Stacking Faults in 4H-SiC Layers Grown by Sublimation Epitaxy
    Outokumpu Semitronic, Box 255, 17824 Ekerö, Sweden
    不详
    Phys Scr T, (64-66):
  • [27] Characterization of bulk (111) 3C-SiC single crystals grown on 4H-SiC by the CF-PVT method
    Latu-Romain, L.
    Chaussende, D.
    Balloud, C.
    Juillaguet, S.
    Rapenne, L.
    Pernot, E.
    Camassel, J.
    Pons, M.
    Madar, R.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 99 - 102
  • [28] Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals
    Okuda, Takafumi
    Miyake, Hiroki
    Kimoto, Tsunenobu
    Suda, Jun
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 413 - 416
  • [29] High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
    Sveinbjörnsson, EÖ
    Olafsson, HÖ
    Gudjónsson, G
    Allerstam, F
    Nilsson, PÅ
    Syväjärvi, M
    Yakimova, R
    Hallin, C
    Rödle, T
    Jos, R
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 841 - 844
  • [30] Step structures and structural defects in bulk SiC crystals grown by sublimation method
    Okamoto, A
    Sugiyama, N
    Tani, T
    Kamiya, N
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 21 - 24
12345