The vertically stacked organic sensor-transistor on a flexible substrate
被引:11
作者:
Jeong, Shin Woo
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Jeong, Shin Woo
[1
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Jeong, Jin Wook
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Jeong, Jin Wook
[1
]
Chang, Seongpil
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Chang, Seongpil
[1
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Kang, Seung Youl
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Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 138, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Kang, Seung Youl
[2
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Cho, Kyoung Ik
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Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 138, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Cho, Kyoung Ik
[2
]
Ju, Byeong Kwon
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Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South KoreaKorea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
Ju, Byeong Kwon
[1
]
机构:
[1] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 136713, South Korea
[2] Elect & Telecommun Res Inst, Convergence Components & Mat Res Lab, Taejon 138, South Korea
The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/phenyl-C-61-butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (Delta I/I-0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits. (C) 2010 American Institute of Physics. [doi:10.1063/1.3530448]
机构:
Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Lee, Kwanghee
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Coates, Nelson E.
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Coates, Nelson E.
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Moses, Daniel
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Moses, Daniel
;
Nguyen, Thuc-Quyen
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Nguyen, Thuc-Quyen
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Dante, Mark
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Dante, Mark
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Heeger, Alan J.
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
机构:
Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USAUniv Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Lee, Kwanghee
;
Coates, Nelson E.
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Coates, Nelson E.
;
Moses, Daniel
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Moses, Daniel
;
Nguyen, Thuc-Quyen
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Nguyen, Thuc-Quyen
;
Dante, Mark
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
Dante, Mark
;
Heeger, Alan J.
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机构:Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA