MOVPE growth for UV-LEDs

被引：7

作者：

Knauer, Arne ^{[1
]}

Brunner, Frank ^{[1
]}

Kolbe, Tim ^{[2
]}

Kueller, Viola ^{[1
]}

Rodriguez, Hernan ^{[1
]}

Einfeldt, Sven ^{[1
]}

Weyers, Markus ^{[1
]}

Kneissl, Michael ^{[1
,2
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

来源：

LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIII | 2009年 / 7231卷

关键词：

UV; ultraviolet; light emitting diodes; LEDs; AlN; AlGaN; AlGaInN; MOVPE; epitaxy;

D O I：

10.1117/12.816927

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Challenges for the MOVPE growth of LED heterostructures for emission in the UV-A and UV-B spectral range are discussed. Special attention is given to the effects of strain in the In(Al)GaN active region as well as in the complete layer stack. Here in-situ monitoring of wafer bowing is shown to be an important tool for optimization of the growth sequence. We will compare different buffer layer technologies, in particular GaN/sapphire for LEDs emitting at 380 nm and AlN/AlGaN buffer for shorter wavelength LEDs. By increasing the aluminum content in the InAlGaN multiple-quantum-well active region and by optimizing the composition and doping profile of the electron blocking layers UV LEDs with emission wavelength between 380 nm and 318 nm are demonstrated.

引用

页数：9

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