A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance

SiC MOSFET is one of the most popular power devices in some high-end applications. Since SiC MOSFET has already penetrated into many applications, the requirement of accurate SPICE models is a significant issue for circuit designers. From previous literature, researchers have already exported models that could well-approximate the output characteristics of realistic SiC MOSFETs. Yet, the capacitance models are still based on an exponential model. The mismatching between these rough models and practical devices may induce unpredictable failures. In this work, a simple and accurate SPICE capacitance model for SiC MOSFET has been established by inserting an auxiliary modified function into each capacitor model. Compared to conventional models, dynamic behavior similarity gains significant improvements. Moreover, a switching test has also been done to evaluate the dynamic performance. As a result, the simulated waveform by the proposed method is quite similar to the experimental waveform. In short, this paper provides a better method to match the characteristics of SiC MOSFET by a simple modified capacitance model.