Ultraviolet electroluminescence at room temperature from a pn junction of heteroepitaxial diamond film by CVD

被引：9
作者：
Wang, WL [1 ]
Liao, KJ
Cai, CZ
Zhu, YB
Ma, Y
Liao, HY
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
[2] Optoelect Technol & Syst Key Lab Educ Minist, Chongqing 400044, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 08期
基金：
中国国家自然科学基金;
关键词：
diamond films; ultraviolet emission; pn junction; chemical vapor deposition (CVD);
D O I：
10.1016/S0925-9635(03)00111-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ultraviolet emission from a pn junction of heteroepitaxial diamond film was investigated. Diamond films were deposited on Si(100) by microwave plasma chemical vapor deposition. B-doped and P-doped layers were formed by trimethylboron and phosphine as impurity source gasses. The properties of p- and n-type layers were characterized by SEM, SIMS, Raman spectroscopy and Hall measurements. The experimental results showed that the current-voltage (I-V) characteristics of the pn junction exhibited good rectifying properties. A sharp emission peak at 235 nm was observed at 22 V for 9 mA at room temperature. Broad A-band emission in the visible region also appeared simultaneously. The results obtained are discussed in detail. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1385 / 1388
页数：4
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