Effect of Ti doping on electronic and magnetic properties of Sm0.55Sr0.45Mn1-xTixO3 (0.0 ≤ x ≤ 0.2)

被引：4
作者：
Bhat, Masroor Ahmad [1 ]
Mir, Irshad Ahmad [2 ]
Zeb, M. Husnain [2 ]
Peng, Jin [1 ]
Dong, Shuai [1 ]
机构：
[1] Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China
[2] Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Guangdong, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2021年 / 127卷 / 09期
关键词：
Rietveld refinement; SEM; Variable range hopping model; Small polaron hopping model; Anti-ferromagnetism; Double exchange mechanism; ELECTRICAL-TRANSPORT PROPERTIES; LOW-FIELD MAGNETORESISTANCE; LA0.7SR0.3MN1-XTIXO3; MAGNETOTRANSPORT; SUBSTITUTION; RESISTIVITY; BEHAVIOR;
D O I：
10.1007/s00339-021-04811-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, tetravalent Ti doping effect on structural, electrical, and magnetic properties of disordered Sm0.55Sr0.45Mn1- xTixO3 (0.0 <= x <= 0.2) system was investigated. Unlike the metallic nature of resistivity below Curie temperature T-C in parent compound, the Ti-doped composition exhibits only semiconducting-type behavior throughout the measured temperature range. The electrical transport results above T-C can be explained within the framework of variable range hopping (VRH) and small polaron hopping (SPH) models. Furthermore, magnetization measurements show drastic reduction of T-C, Curie Weiss temperature (theta(CW)) and effective magnetic moment (mu(eff)) due to replacement of Ti4+ at Mn4+ site, which can broke exchange coupling of Mn3+/Mn4+ network, destroy the long-range ferromagnetic order.
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页数：10
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