Ga-rich GaP(001)(2x4) surface structure studied by low-energy ion scattering spectroscopy

被引：10

作者：

Naitoh, M ^{[1
]}

Konishi, A

Inenaga, H

Nishigaki, S

Oishi, N

Shoji, F

机构：

[1] Kyushu Inst Technol, Dept Elect Engn, Kitakyushu, Fukuoka 8048550, Japan

[2] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

[3] Kyushu Kyoritsu Univ, Fac Engn, Kitakyushu, Fukuoka 8070867, Japan

来源：

SURFACE SCIENCE | 1998年 / 402卷 / 1-3期

关键词：

computer simulations; gallium phosphide; low energy ion scattering (LEIS); low index single crystal surfaces; semiconducting surfaces; surface relaxation and reconstruction; surface structure; morphology; roughness and topography;

D O I：

10.1016/S0039-6028(97)00902-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the results of low-energy He+-ion scattering spectroscopy investigation of a Ga-rich GaP(001)(2 x 4) surface prepared by Ne+-ion bombardment and annealing. The incidence-angle a dependence of the scattered ion intensity was obtained along the [1(1) over bar 0] two-fold direction and the [110] four-fold direction. Our results suggest that this Ga-rich GaP(001) surface contains a Ga double-layer consisting of a (2 x 4)-arrangement of two Ga-dimers on top of the second Ga-layer. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：623 / 627

页数：5

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