Impact of strain on the optical fingerprint of monolayer transition-metal dichalcogenides

被引:59
作者
Feierabend, Maja [1 ]
Morlet, Alexandre [2 ]
Berghauser, Gunnar [1 ]
Malic, Ermin [1 ]
机构
[1] Chalmers Univ Technol, Dept Phys, S-41296 Gothenburg, Sweden
[2] Ecole Normale Super, Dept Phys, F-94230 Cachan, France
基金
瑞典研究理事会;
关键词
ELECTRONIC-PROPERTIES; VALLEY POLARIZATION; MANY-BODY; MOS2; SEMICONDUCTOR;
D O I
10.1103/PhysRevB.96.045425
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Strain presents a straightforward tool to tune electronic properties of atomically thin nanomaterials that are highly sensitive to lattice deformations. While the influence of strain on the electronic band structure has been intensively studied, there are only a few works on its impact on optical properties of monolayer transition-metal dichalcogenides (TMDs). Combining microscopic theory based on Wannier and Bloch equations with nearest-neighbor tight-binding approximation, we present an analytical view on how uni- and biaxial strain influences the optical fingerprint of TMDs, including their excitonic binding energy, oscillator strength, optical selection rules, and the radiative broadening of excitonic resonances. We show that the impact of strain can be reduced to changes in the lattice structure (geometric effect) and in the orbital functions (overlap effect). In particular, we demonstrate that the valley-selective optical selection rule is softened in the case of uniaxial strain due to the introduced asymmetry in the lattice structure. Furthermore, we reveal a considerable increase of the radiative dephasing due to strain-induced changes in the optical matrix element and the excitonic wave functions.
引用
收藏
页数:7
相关论文
共 32 条
[21]   Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides [J].
Ramasubramaniam, Ashwin .
PHYSICAL REVIEW B, 2012, 86 (11)
[22]   Tight-binding description of graphene -: art. no. 035412 [J].
Reich, S ;
Maultzsch, J ;
Thomsen, C ;
Ordejón, P .
PHYSICAL REVIEW B, 2002, 66 (03) :354121-354125
[23]   Inverse Funnel Effect of Excitons in Strained Black Phosphorus [J].
San-Jose, Pablo ;
Parente, Vincenzo ;
Guinea, Francisco ;
Roldan, Rafael ;
Prada, Elsa .
PHYSICAL REVIEW X, 2016, 6 (03)
[24]   First-principles study of strained 2D MoS2 [J].
Scalise, E. ;
Houssa, M. ;
Pourtois, G. ;
Afanas'ev, V. V. ;
Stesmans, A. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 56 :416-421
[25]   Reversible uniaxial strain tuning in atomically thin WSe2 [J].
Schmidt, Robert ;
Niehues, Iris ;
Schneider, Robert ;
Drueppel, Matthias ;
Deilmann, Thorsten ;
Rohlfing, Michael ;
de Vasconcellos, Steffen Michaelis ;
Castellanos-Gomez, Andres ;
Bratschitsch, Rudolf .
2D MATERIALS, 2016, 3 (02)
[26]   Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides [J].
Selig, Malte ;
Berghaeuser, Gunnar ;
Raja, Archana ;
Nagler, Philipp ;
Schueller, Christian ;
Heinz, Tony F. ;
Korn, Tobias ;
Chernikov, Alexey ;
Malic, Ermin ;
Knorr, Andreas .
NATURE COMMUNICATIONS, 2016, 7
[27]   Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2 [J].
Shi, Hongliang ;
Pan, Hui ;
Zhang, Yong-Wei ;
Yakobson, Boris I. .
PHYSICAL REVIEW B, 2013, 87 (15)
[28]   Influence of Excited Carriers on the Optical and Electronic Properties of MoS2 [J].
Steinhoff, A. ;
Roesner, M. ;
Jahnke, F. ;
Wehling, T. O. ;
Gies, C. .
NANO LETTERS, 2014, 14 (07) :3743-3748
[29]   Quantum theory of phonon-assisted exciton formation and luminescence in semiconductor quantum wells [J].
Thränhardt, A ;
Kuckenburg, S ;
Knorr, A ;
Meier, T ;
Koch, SW .
PHYSICAL REVIEW B, 2000, 62 (04) :2706-2720
[30]   Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS2 and WS2 [J].
Wang, Luqing ;
Kutana, Alex ;
Yakobson, Boris I. .
ANNALEN DER PHYSIK, 2014, 526 (9-10) :L7-L12