Dissipative Transport in Nanoscale Monolayer MoS2 Transistors

Performances of monolayer MoS2 transistors with phonon scattering are investigated. The on-current of a 20nm long device can be degraded by 40% with phonon scattering compared with the ballistic limit. The subthreshold swing (SS) and drain induced barrier lowering (DIBL) are found to be insensitive to phonon scattering. SS < 100mV/decade can be achieved with a gate length L-G > 5nm and DIBL < 100mV/V can be achieved with a L-G > 8nm for a double gate structure with a 3nm thick high-k gate insulator. Treatment of phonon scattering is important for accurate assessment of intrinsic delay and on/off ratio even at L-G similar to 10nm.