HVM Metrology Challenges towards the 5 nm Node

被引：37

作者：

Bunday, Benjamin ^{[1
]}

机构：

[1] SUNY Poly SEMATECH, Albany, NY 12203 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXX | 2016年 / 9778卷

关键词：

metrology; gaps analysis; critical dimension; defect; films; CD-SEM; OCD; X-ray; EBI; CD-METROLOGY; DIELECTRIC-CONSTANT; BEAM INSPECTION; HIGH-ENERGY; MASK; MODEL; WAFER; ANGLE; TILT;

D O I：

10.1117/12.2218375

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper will provide a high level overview of the future for in-line high volume manufacturing (HVM) metrology for the semiconductor industry. First, we will take a broad view of the needs of patterned defect, critical dimensional (CD/3D) and films metrology, and present the extensive list of applications for which metrology solutions are needed. Commonalities and differences among the various applications will be shown. We will then report on the gating technical limits of the most important of these metrology solutions to address the metrology challenges of future nodes, highlighting key metrology technology gaps requiring industry attention and investment.

引用

页数：34

共 108 条

[1] Angular Dependence of Betatron X-Ray Spectra from a Laser-Wakefield Accelerator [J].

Albert, F. ;

Pollock, B. B. ;

Shaw, J. L. ;

Marsh, K. A. ;

Ralph, J. E. ;

Chen, Y. -H. ;

Alessi, D. ;

Pak, A. ;

Clayton, C. E. ;

Glenzer, S. H. ;

Joshi, C. .

PHYSICAL REVIEW LETTERS, 2013, 111 (23)

[2]

[Anonymous], 2009, MICROSC TODAY

[3]

Anthony Sebastian, P SPIE

[4] Patterned Defect & CD Metrology by TSOM Beyond the 22 nm Node [J].

Arceo, Abraham ;

Bunday, Benjamin ;

Vartanian, Victor ;

Attota, Ravikiran .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVI, PTS 1 AND 2, 2012, 8324

[5]

Arceo A, 2012, SOLID STATE TECHNOL, V55, P15

[6] Towards 3nm overlay and critical dimension uniformity: an integrated error budget for double patterning lithography - art. no. 692404 [J].

Arnold, William H. .

OPTICAL MICROLITHOGRAPHY XXI, PTS 1-3, 2008, 6924 :92404-92404

[7] TSOM Method for Semiconductor Metrology [J].

Attota, Ravikiran ;

Dixson, Ronald G. ;

Kramar, John A. ;

Potzick, James E. ;

Vladar, Andras E. ;

Bunday, Benjamin ;

Novak, Erik ;

Rudack, Andrew .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXV, PT 1 AND PT 2, 2011, 7971

[8]

Bishop M, 2005, AIP CONF PROC, V788, P407, DOI 10.1063/1.2062995

[9]

Brian Wang, 2013, NEXT BIG FUTURE

[10]

Brill B., 2010, P SPIE, V7638

← 1 2 3 4 5 6 7 8 9 10 →