Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals

被引:60
作者
Bickermann, Matthias [1 ]
Epelbaum, Boris M. [2 ]
Filip, Octavian [2 ]
Tautz, Barbara [1 ]
Heimann, Paul [2 ]
Winnacker, Albrecht [1 ]
机构
[1] Univ Erlangen Nurnberg, Dept Mat Sci I MEET 6, Martensstr 7, D-91058 Erlangen, Germany
[2] CrystAl N GmbH, D-91058 Erlangen, Germany
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词
AlN; growth from vapour; crystal facets; zonar structure; optical properties; SINGLE-CRYSTALS;
D O I
10.1002/pssc.201100345
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The surface of bulk AlN single crystals grown by PVT on Al-polar (0001) seeds is typically constructed from prismatic, pyramidal, and basal plane facets. Simultaneous growth on different facets with different surface kinetics leads to formation of a zonar structure which is visible due to local differences in coloration in the wafers. Four zones on an AlN wafer representing 1 growth on {10 (1) under bar3} pyramidal facets, 2 growth adjacent to ridges and (0001) basal plane facets, and 3+4 outer and centre areas corresponding to surface depressions are investigated. They show striking differences in optical absorption (OA) spectra, cathodoluminescence (CL) spectra and chemical analysis (SIMS). In areas near ridges and (0001) facets and in centres of depressions, deep-UV absorption as well as luminescence is significantly increased. We assign OA and CL bands observed in these zones to the presence of carbon and/or the lack of oxygen due to local segregation effects caused by faceting. (C ) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:449 / 452
页数:4
相关论文
共 12 条
[1]   Orientation-dependent properties of aluminum nitride single crystals [J].
Bickermann, M. ;
Heimann, P. ;
Epelbaum, B. M. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06) :1902-1906
[2]   Deep-UV transparent bulk single-crystalline AlN substrates [J].
Bickermann, Matthias ;
Epelbaum, Boris M. ;
Filip, Octavian ;
Heimann, Paul ;
Feneberg, Martin ;
Nagata, Shunro ;
Winnacker, Albrecht .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8)
[3]   Point defect content and optical transitions in bulk aluminum nitride crystals [J].
Bickermann, Matthias ;
Epelbaum, Boris M. ;
Filip, Octavian ;
Heimann, Paul ;
Nagata, Shunro ;
Winnacker, Albrecht .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (06) :1181-1183
[4]   Systematic prediction of kinetically limited crystal growth morphologies [J].
Du, DX ;
Srolovitz, DJ ;
Coltrin, ME ;
Mitchell, CC .
PHYSICAL REVIEW LETTERS, 2005, 95 (15)
[5]   Advances in Bulk Crystal Growth of AlN and GaN [J].
Ehrentraut, Dirk ;
Sitar, Zlatko .
MRS BULLETIN, 2009, 34 (04) :259-265
[6]   Similarities and differences in sublimation growth of SiC and AlN [J].
Epelbaum, B. M. ;
Bickermann, M. ;
Nagata, S. ;
Heimann, P. ;
Filip, O. ;
Winnacker, A. .
JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :317-325
[7]   Natural growth habit of bulk AlN crystals [J].
Epelbaum, BM ;
Seitz, C ;
Magerl, A ;
Bickermann, M ;
Winnacker, A .
JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :577-581
[8]   Effects of growth direction and polarity on bulk aluminum nitride crystal properties [J].
Filip, O. ;
Epelbaum, B. M. ;
Bickermann, M. ;
Heimann, P. ;
Winnacker, A. .
JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :427-431
[9]   Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations [J].
Lu, P. ;
Collazo, R. ;
Dalmau, R. F. ;
Durkaya, G. ;
Dietz, N. ;
Sitar, Z. .
APPLIED PHYSICS LETTERS, 2008, 93 (13)
[10]   Ultraviolet luminescence in AlN [J].
Schulz, T. ;
Albrecht, M. ;
Irmscher, K. ;
Hartmann, C. ;
Wollweber, J. ;
Fornari, R. .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (06) :1513-1518