Thick GaN grown on a nanoporous GaN template by hydride vapor phase epitaxy

被引：3

作者：

Wang, Xinzhong ^{[1
,2
]}

Yu, Guanghui ^{[1
]}

Lin, Chaotong ^{[1
,2
]}

Cao, Mingxia ^{[1
,2
]}

Gong, Hang ^{[1
]}

Qi, Ming ^{[1
]}

Li, Aizhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1149/1.2943662

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

High-quality thick gallium nitride (GaN) films were overgrown by hydride vapor phase epitaxy (HVPE) on a nanoporous GaN template which was prepared by inductively coupled plasma etching employing an anodized aluminum oxide mask. An obvious reduction of the dislocation density in the thick GaN layer was demonstrated by high-resolution X-ray diffraction, which exhibited the improved crystalline quality in GaN films overgrown on a nanopatterned surface. Moreover, the peak redshift in photoluminescence and micro-Raman spectroscopy indicates a significant strain relaxation in the HVPE-GaN layer. Compared with conventional overgrowth, such a deposition pathway is a more promising technique for the growth of thick GaN layers. (C) 2008 The Electrochemical Society.

引用

页码：H273 / H275

页数：3

共 24 条

[1] Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN [J].