A Wide-Swing Low-Noise Transconductance Amplifier and the Enabling of Large-Signal Handling Direct-Conversion Receivers

被引：12

作者：

Keehr, Edward A. ^{[1
]}

Hajimiri, Ali ^{[1
]}

机构：

[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2012年 / 59卷 / 01期

关键词：

Common-gate; low-noise amplier (LNA); low-noise transconductance amplifier (LNTA); RF receiver; wide-swing; CMOS LNA; INTERMODULATION PRODUCTS; DISTORTION CANCELLATION; EMPLOYING NOISE; BAND; DESIGN; OPTIMIZATION; FEEDBACK; MOSFETS; GAIN;

D O I：

10.1109/TCSI.2011.2161367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design of a wide-swing low-noise transconductance amplifier (LNTA) is presented in the context of passive mixer-based direct-conversion RF receivers, noting that the compression performance of such systems is limited by the initial voltage-to-current conversion. The proposed LNTA utilizes a stacked PMOS/NMOS common-gate configuration with its input common-mode voltage maintained by a class-AB operational transconductance amplifier (OTA). Linearization mechanisms and design procedures are explained both quantitatively and intuitively. Simulations of the LNTA at the typical corner, when ideally loaded, show an IIP3 of +32.8 dBm extrapolated at a +12.5 dBm/-16.5 dBm CW blocking condition and an out-of-band 1-dB desensitization point of +22 dBm. These results are also shown to qualitatively agree with those extracted from an analytical model of the LNTA.

引用

页码：30 / 43

页数：14

共 35 条

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