Influence of annealing on the structure and optical properties of Zn40Se60 thin films

被引:33
作者
Abdel-Rahim, M. A. [1 ]
Hafiz, M. M. [1 ]
Elwhab, A.
Alwany, B. [2 ]
机构
[1] Assiut Univ, Fac Sci, Dept Phys, Assiut, Egypt
[2] Ibb Univ, Ibb, Yemen
关键词
Zn40Se60; semiconductors; Structure; Optical properties; ELECTRICAL-PROPERTIES; AMORPHOUS SEMICONDUCTORS; CRYSTALLIZATION KINETICS; CHALCOGENIDE GLASSES; ABSORPTION; CONSTANTS; TRANSITION; CONDUCTION; SYSTEM; GAP;
D O I
10.1016/j.optlastec.2011.10.003
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin films of Zn40Se60 were prepared by the vacuum thermal evaporation technique. The influence of annealed temperature on the structural and optical properties was investigated using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical transmission. The XRD studies show that the as-deposited film is amorphous in nature, but the crystallinity improved with increasing the annealing temperature. Furthermore the particle size and crystallinity increased whereas the dislocation and strains decreased with increasing the annealing temperature. SEM studies showed that the annealing temperature induced changes in the morphology of the as-deposited sample. Various optical constant have been calculated for as-deposited and annealed films. The mechanism of the optical absorption follows the rule of direct transition. It was found that, the optical energy gap (E-g) decreased with increasing the annealing temperature. These results can be interpreted by the Davis and Motte model. On the other hand the maximum value of the refractive index (n) is shifted toward the long wavelength by increasing the annealing temperature. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1116 / 1121
页数:6
相关论文
共 38 条
[1]   Influence of composition on optical and electrical properties of Ge-Se-In thin films [J].
Abdel-Rahim, M. A. ;
Hafiz, M. M. ;
El-Nahass, M. M. ;
Shamekh, A. M. .
PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) :383-391
[2]   Annealing dependence of optical and electrical properties of Ga8As46Te46 thin films [J].
Abdel-Rahim, MA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1999, 60 (01) :29-39
[3]   Preparation and properties of Ge-Ga-S glasses for laser hosts [J].
Abe, K ;
Takebe, H ;
Morinaga, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 212 (2-3) :143-150
[4]   Effect of annealing on optical constants of Se75S25-xCdx chalcogenide thin films [J].
Al-Hazmi, F. S. .
PHYSICA B-CONDENSED MATTER, 2009, 404 (8-11) :1354-1358
[5]   Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films [J].
Ashraf, M. ;
Akhtar, S. M. J. ;
Khan, A. F. ;
Ali, Z. ;
Qayyum, A. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 509 (05) :2414-2419
[6]   OPTICAL-PROPERTIES OF INDIUM DOPED CDS THIN-FILMS [J].
BERTRAN, E ;
LOUSA, A ;
VARELA, M ;
GARCIACUENCA, MV ;
MORENZA, JL .
SOLAR ENERGY MATERIALS, 1988, 17 (01) :55-64
[7]   VARIATION OF OPTICAL GAP OF THICK AMORPHOUS SELENIUM FILM ON HEAT-TREATMENT [J].
CHAUDHURI, S ;
BISWAS, SK ;
CHOUDHURY, A ;
GOSWAMI, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :179-182
[8]  
Cofmenero J., 1979, J NONCRYST SOLIDS, V30, P263
[9]   Study of scattering of charge carriers in thin films of (Bi0.25Sb0.75)2Te3 alloy with 2% excess Te [J].
Das, VD ;
Mallik, RC .
MATERIALS RESEARCH BULLETIN, 2002, 37 (12) :1961-1971
[10]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].
DAVIS, EA ;
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&