S-BAND Low Noise Amplifier for TT&C receiver in LEO satellites

被引：0
作者：
Siddiqui, MA [1 ]
机构：
[1] Space & Upper Atmospher Res Commiss, Karachi 75270, Pakistan
来源：
RAST 2005: Proceedings of the 2nd International Conference on Recent Advances in Space Technologies | 2005年
关键词：
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger's Duroid 5880 microwave laminate. The power consumption is 27 mW at V-DD=12 V.
引用
收藏
页码：426 / 431
页数：6
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