S-BAND Low Noise Amplifier for TT&C receiver in LEO satellites

被引：0

作者：

Siddiqui, MA ^{[1
]}

机构：

[1] Space & Upper Atmospher Res Commiss, Karachi 75270, Pakistan

来源：

RAST 2005: Proceedings of the 2nd International Conference on Recent Advances in Space Technologies | 2005年

关键词：

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

This paper describes the design, simulation and measurements of a 2025 to 2120 MHz single stage Pseudomorphic High Electron Mobility Transistor (pHEMT) Low Noise Amplifier (LNA), intended for use in a TT&C receiver in low earth orbit (LEO) satellite. The LNA has been simulated with software and the results show that it provides a gain of more than 10 dB, a noise figure below 0.58 dB and VSWR less than 1:1.35. The circuit is designed on Roger's Duroid 5880 microwave laminate. The power consumption is 27 mW at V-DD=12 V.

引用

页码：426 / 431

页数：6

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