High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

被引：116

作者：

Zhang, Lisheng ^{[1
]}

Xu, Fujun ^{[1
]}

Wang, Jiaming ^{[1
]}

He, Chenguang ^{[1
]}

Guo, Weiwei ^{[1
]}

Wang, Mingxing ^{[1
]}

Sheng, Bowen ^{[1
]}

Lu, Lin ^{[2
]}

Qin, Zhixin ^{[1
]}

Wang, Xinqiang ^{[1
,3
]}

Shen, Bo ^{[1
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Anhui Polytech Univ, Anhui Key Lab Detect Technol & Energy Saving Devi, Wuhu 241000, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

中国国家自然科学基金;

关键词：

ALGAN; OVERGROWTH;

D O I：

10.1038/srep35934

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-mu m-period NPSS. The X-ray diffraction omega-scan full width at half maximum values for (0002) and (1012) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

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页数：8

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