Study of Y2O3 thin film prepared by plasma enhanced atomic layer deposition

被引：7

作者：

Cho, G. Y. ^{[1
]}

Noh, S. ^{[1
]}

Lee, Y. ^{[1
]}

Ji, S. ^{[2
]}

Cha, S. W. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mech & Aerosp Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Seoul 151744, South Korea

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 10 | 2014年 / 64卷 / 09期

关键词：

GROWTH; VAPOR; WATER; SI;

D O I：

10.1149/06409.0015ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Y2O3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp3)(3)Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175 degrees C to 325 degrees C. The crystallinity and density of Y2O3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y2O3 thin films are in range of 15 similar to 17 calculated by capacitance - voltage characteristics.

引用

页码：15 / 21

页数：7

共 50 条

[31] Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
Sultan, S. M.
Clark, O. D.
Masaud, T. B.
Fang, Q.
Gunn, R.
Hakim, M. M. A.
Sun, K.
Ashburn, P.
Chong, H. M. H.
MICROELECTRONIC ENGINEERING, 2012, 97 : 162 - 165
[32] Trap Reduction through O3 Post-Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates
Kim, Dong Gun
Kwon, Dae Seon
Lim, Junil
Seo, Haengha
Kim, Tae Kyun
Lee, Woongkyu
Hwang, Cheol Seong
ADVANCED ELECTRONIC MATERIALS, 2021, 7 (02):
[33] Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
Song, Jinhan
Lin, Y.
Hoshii, T.
Wakabayashi, H.
Tsutsui, K.
Kakushima, K.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
[34] Processing of Y2O3 thin films by atomic layer deposition from cyclopentadienyl-type compounds and water as precursors
Niinistö, J
Putkonen, M
Niinistö, L
CHEMISTRY OF MATERIALS, 2004, 16 (15) : 2953 - 2958
[35] Improving the Luminescent Properties of Atomic Layer Deposition Eu:Y2O3 Thin Films through Optimized Thermal Annealing
Scarafagio, Marion
Tallaire, Alexandre
Chavanne, Marie-Helene
Cassir, Michel
Ringuede, Armelle
Serrano, Diana
Goldner, Philippe
Ferrier, Alban
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2020, 217 (08):
[36] Al2O3/TiO2 Nano laminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
Kim, Lae Ho
Kim, Kyunghun
Park, Seonuk
Jeong, Yong Jin
Kim, Haekyoung
Chung, Dae Sung
Kim, Se Hyun
Park, Chan Eon
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (09) : 6731 - 6738
[37] Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
Lee, YJ
Kang, SW
THIN SOLID FILMS, 2004, 446 (02) : 227 - 231
[38] Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition
Lee, Byung Kook
Jung, Eunae
Kim, Seok Hwan
Moon, Dae Chul
Lee, Sun Sook
Park, Bo Keun
Hwang, Jin Ha
Chung, Taek-Mo
Kim, Chang Gyoun
An, Ki-Seok
MATERIALS RESEARCH BULLETIN, 2012, 47 (10) : 3052 - 3055
[39] Co3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer deposition
Donders, M. E.
Knoops, H. C. M.
Kessels, W. M. M.
Notten, P. H. L.
JOURNAL OF POWER SOURCES, 2012, 203 : 72 - 77
[40] Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
Lee, Young-Soo
Han, Ju-Hwan
Park, Jin-Seong
Park, Jozeph
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):

← 1 2 3 4 5 →