Study of Y2O3 thin film prepared by plasma enhanced atomic layer deposition

被引：8

作者：

Cho, G. Y. ^{[1
]}

Noh, S. ^{[1
]}

Lee, Y. ^{[1
]}

Ji, S. ^{[2
]}

Cha, S. W. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mech & Aerosp Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Seoul 151744, South Korea

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 10 | 2014年 / 64卷 / 09期

关键词：

GROWTH; VAPOR; WATER; SI;

D O I：

10.1149/06409.0015ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Y2O3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp3)(3)Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175 degrees C to 325 degrees C. The crystallinity and density of Y2O3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y2O3 thin films are in range of 15 similar to 17 calculated by capacitance - voltage characteristics.

引用

页码：15 / 21

页数：7

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