Enhancement Factor for Electrical Near-Field on Perturbation Slit Nano Structure with Peak Resonance at 30 THz

被引：0

作者：

Ismail, M. K. H. ^{[1
]}

Esa, M. ^{[1
]}

Murad, N. A. ^{[2
]}

Abd Malik, N. N. Nik ^{[2
]}

Hamzah, S. A. ^{[2
]}

Yusoff, M. F. Mohd ^{[2
]}

机构：

[1] Univ Teknol Malaysia, Utm Johor Bahru 81310, Malaysia

[2] Univ Teknol Malaysia, Fac Elect Engn, Dept Commun Engn, Utm Johor Bahru 81310, Malaysia

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON RF AND WIRELESS TECHNOLOGIES FOR BIOMEDICAL AND HEALTHCARE APPLICATIONS (IMWS-BIO) | 2013年

关键词：

Near-field; rectangular; perturbation slit; THz;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

This paper presents the investigation carried out on electrical near-field enhancement of a perturbation slit of a rectangular radiating nanostructure. The operating frequency is defined at thermal radiation spectrum from 20 THz to 40 THz. Single and two identical perturbation slits are introduced at the center of the nano structure. It was found that the former is able to enhance the near-field distribution to 120 times while the latter is approximately 80 times. In addition, the splitting of the near-field amplitude resembles that of an energy divider.

引用

页码：365 / 367

页数：3

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