Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

被引：219
|
作者：
Moreira, Milena [1 ]
Bjurstrom, Johan [1 ]
Katardjev, Ilia [1 ]
Yantchev, Ventsislav [1 ]
机构：
[1] Uppsala Univ, Dept Solid State Elect, Angstrom Lab, S-75121 Uppsala, Sweden
来源：
VACUUM | 2011年 / 86卷 / 01期
基金：
瑞典研究理事会;
关键词：
Thin film devices; Composite thin films; Acoustic microwave devices;
D O I：
10.1016/j.vacuum.2011.03.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Piezoelectric c-textured Al(1-x)ScxN thin films, where the Sc relative concentration, x, varies in the range 0-0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al(1-x)ScxN based FBARs for wide band RF applications. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：23 / 26
页数：4
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