Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks

被引：64

作者：

Apostolopoulos, G ^{[1
]}

Vellianitis, G

Dimoulas, A

Hooker, JC

Conard, T

机构：

[1] Natl Ctr Sci Res Demokritos, Inst Sci Mat, MBE Lab, Aghia Paraskevi 15310, Greece

[2] Philips Res Leuven, B-3001 Heverlee, Belgium

[3] IMEC VZW, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 02期

关键词：

D O I：

10.1063/1.1639942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method of analyzing the complex admittance of metal-insulator-semiconductor (MIS) structures has been developed with the aim to extract the density and capture cross section of interface traps from combined ac capacitance-voltage and conductance-voltage measurements at different frequencies. The procedure is applied to study dielectric stacks based on La2Hf2O7 high-kappa dielectric, which could be considered as a SiO2 replacement for future transistors. (C) 2004 American Institute of Physics.

引用

页码：260 / 262

页数：3

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