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Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer
被引:5
作者:

Qu, Shang-Da
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Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Xu, Ming-Sheng
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Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Wang, Cheng-Xin
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机构:
Shandong Inspur Huaguang Optoelect Co Ltd, Weifang 261061, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Shi, Kai-Ju
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Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Li, Rui
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Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Wei, Ye-Hui
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Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Xu, Xian-Gang
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机构:
Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China

Ji, Zi-Wu
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机构:
Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China
机构:
[1] Shandong Univ, Sch Microelect, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Shandong Inspur Huaguang Optoelect Co Ltd, Weifang 261061, Peoples R China
基金:
中国国家自然科学基金;
关键词:
InGaN;
GaN;
asymmetric triangular multiple quantum wells;
structural and electroluminescence properties;
efficiency droop;
QUANTUM-WELLS;
INJECTION CURRENT;
TEMPERATURE;
ELECTROLUMINESCENCE;
PHOTOLUMINESCENCE;
SHIFT;
D O I:
10.1088/1674-1056/ac0817
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Temperature-dependent and driving current-dependent electroluminescence spectra of two different InGaN/GaN multiple quantum well structures SA and SB are investigated, with the In composition in each well layer (WL) along the growth direction progressively increasing for SA and progressively decreasing for SB. The results show that SB exhibits an improved efficiency droop compared with SA. This phenomenon can be explained as follows: owing to the difference in growth pattern of the WL between these two samples, the terminal region of the WL in SB contains fewer In atoms than in SA, and therefore the former undergoes less In volatilization than the latter during the waiting period required for warming-up due to the difference in the growth temperature between well and barrier layers. This results in SB having a deeper triangular-shaped potential well in its WL than SA, which strongly confines the carriers to the initial region of the WL to prevent them from leaking to the p-GaN side, thus improving the efficiency droop. Moreover, the improvement in the efficiency droop for SB is also partly attributed to its stronger Coulomb screening effect and carrier localization effect.
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页数:5
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