Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors

被引：13

作者：

Liu, W. F. ^{[2
]}

Wang, S. Y. ^{[1
]}

Wang, Can ^{[3
]}

机构：

[1] Tianjin Normal Univ, Coll Phys & Elect Informat Sci, Tianjin 300387, Peoples R China

[2] Tianjin Univ, Dept Appl Phys, Fac Sci, Tianjin 300072, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 18期

基金：

中国国家自然科学基金;

关键词：

Crystal structure; X-ray diffraction; Laser epitaxy; Perovskites; Dielectric materials; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; CONDUCTION MECHANISM; IRO2; ELECTRODES; LEAKAGE CURRENT; IMPRINT; RESISTANCE;

D O I：

10.1016/j.physb.2011.06.009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ba0.5Sr0.5Ti0.99Co0.01O3 (BSTC) thin films have been fabricated with pulsed laser deposition on Nb-doped SrTiO3 (STN) substrate. In Pt/BSTC/STN capacitor, we systematically investigated the capacitance, leakage current and polarization versus bias voltage characteristics, and found that curves of capacitance versus voltage and leakage current versus voltage were not symmetric, and polarization hysteresis loop exhibited large relaxation of the remnant polarization at negatively poled state. A detailed analysis of capacitance data demonstrated a difference of the built-in voltage between top Pt/BSTC interface (V-b,V-t=2.5 V) and bottom BSTC/STN interface (V-b,V-b=1.1 V). Such different built-in voltages lead to the presence of an internal electric field, which results in asymmetric electric characteristics in Pt/BSTC/STN capacitor. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3406 / 3409

页数：4

共 27 条

[21] Raman spectroscopy studies of Ce-doping effects on Ba0.5Sr0.5TiO3 thin films -: art. no. 013504 [J].

Wang, SY ;

Cheng, BL ;

Wang, C ;

Dai, SY ;

Jin, KJ ;

Zhou, YL ;

Lu, HB ;

Chen, ZH ;

Yang, GZ .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

[22] Mechanisms of asymmetric leakage current in Pt/Ba0.6Sr0.4TiO3/Nb-SrTiO3 capacitor [J].

Wang, SY ;

Cheng, BL ;

Wang, C ;

Dai, SY ;

Lu, HB ;

Zhou, YL ;

Chen, ZH ;

Yang, GZ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (06) :1265-1268

[23] Reduction of leakage current by Co doping in Pt/Ba0.5Sr0.5TiO3/Nb-SrTiO3 capacitor [J].

Wang, SY ;

Cheng, BL ;

Wang, C ;

Dai, SY ;

Lu, HB ;

Zhou, YL ;

Chen, ZH ;

Yang, GZ .

APPLIED PHYSICS LETTERS, 2004, 84 (20) :4116-4118

[24] Recurrent local resistance breakdown of epitaxial BaTiO3 heterostructures [J].

Watanabe, Y ;

Sawamura, D ;

Okano, M .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2415-2417

[25] Effect of lattice-misfit strain on the process-induced imprint behavior in epitaxial Pb(Zr0.52Ti0.48)O3 thin films [J].

Wu, WB ;

Wang, Y ;

Pang, GKH ;

Wong, KH ;

Choy, CL .

APPLIED PHYSICS LETTERS, 2004, 85 (09) :1583-1585

[26] Control of etch slope during etching of Pt in Ar/Cl-2/O-2 plasmas [J].

Yoo, WJ ;

Hahm, JH ;

Kim, HW ;

Jung, CO ;

Koh, YB ;

Lee, MY .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (4B) :2501-2504

[27]

ZHU XH, 2004, J APPL PHYS, V97

← 1 2 3 →