Effect of substrate temperature on structural and linear and nonlinear optical properties of nanostructured PLD a-SiC thin films

被引:22
作者
Dey, Partha P. [1 ]
Khare, Alika [1 ]
机构
[1] Indiah Inst Technol Guwahati, Dept Phys, Gauhati 39, India
关键词
Optical materials; Thin films; Laser deposition; Raman spectroscopy; Infrared spectroscopy; SILICON-CARBIDE FILMS; PULSED-LASER DEPOSITION; AMORPHOUS-SILICON; LIGHT-EMISSION; ALLOYS; CONSTANTS; THICKNESS; COATINGS; GROWTH;
D O I
10.1016/j.materresbull.2016.07.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the effect of substrate temperatures (T-s) on the structural, linear and non-linear optical properties of nanostructured amorphous Silicon Carbide (a-SiC) thin films deposited onto fused silica by pulsed-laser deposition technique is reported. The structural and compositional properties were studied by X-ray diffraction, Raman spectroscopy and Fourier transform Infrared spectroscopy. A transition from Silicon-rich SiC to nearly stoichiometric SiC was observed with increasing T-s. The absorption coefficient (alpha), refractive index (n), optical band gap and thickness of the films were determined from UV-vis-IR spectra. Static refractive indices of the films were found to vary from 2.99-2.54 with the increasing T-s. The optical band gap of the films was found to be increasing from 1.5 eV to 2.33 eV with increase in T-s. The third order non-linear optical susceptibility (chi((3))) of the a-SiC thin films estimated from Z-scan studies was found to be of the order of 10(-3) esu. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:105 / 117
页数:13
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