Infrared probe of the insulator-to-metal transition in Ga1-xMnxAs and Ga1-xBexAs

被引：26

作者：

Chapler, B. C. ^{[1
]}

Myers, R. C. ^{[2
]}

Mack, S. ^{[3
]}

Frenzel, A. ^{[1
]}

Pursley, B. C. ^{[1
]}

Burch, K. S. ^{[4
,5
]}

Singley, E. J. ^{[6
]}

Dattelbaum, A. M. ^{[7
]}

Samarth, N. ^{[8
]}

Awschalom, D. D. ^{[3
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

[3] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[5] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada

[6] Calif State Univ E Bay, Dept Phys, Hayward, CA 94542 USA

[7] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[8] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 08期

基金：

美国国家科学基金会;

关键词：

MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; TEMPERATURE; SPECTRA; BAND;

D O I：

10.1103/PhysRevB.84.081203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

引用

页数：4

共 38 条

[31] Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy [J].

Sapega, V. F. ;

Sablina, N. I. ;

Panaiotti, I. E. ;

Averkiev, N. S. ;

Ploog, K. H. .

PHYSICAL REVIEW B, 2009, 80 (04)

[32] Polarization of valence band holes in the (Ga,Mn)As diluted magnetic semiconductor -: art. no. 137401 [J].

Sapega, VF ;

Moreno, M ;

Ramsteiner, M ;

Däweritz, L ;

Ploog, KH .

PHYSICAL REVIEW LETTERS, 2005, 94 (13)

[33] First-principles theory of dilute magnetic semiconductors [J].

Sato, K. ;

Bergqvist, L. ;

Kudrnovsky, J. ;

Dederichs, P. H. ;

Eriksson, O. ;

Turek, I. ;

Sanyal, B. ;

Bouzerar, G. ;

Katayama-Yoshida, H. ;

Dinh, V. A. ;

Fukushima, T. ;

Kizaki, H. ;

Zeller, R. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (02) :1633-1690

[34] Onset of ferromagnetism in low-doped Ga1-xMnxAs [J].

Sheu, B. L. ;

Myers, R. C. ;

Tang, J. -M. ;

Samarth, N. ;

Awschalom, D. D. ;

Schiffer, P. ;

Flatte, M. E. .

PHYSICAL REVIEW LETTERS, 2007, 99 (22)

[35] Infrared probe of itinerant ferromagnetism in Ga1-xMnxAs -: art. no. 097203 [J].

Singley, EJ ;

Kawakami, R ;

Awschalom, DD ;

Basov, DN .

PHYSICAL REVIEW LETTERS, 2002, 89 (09) :972031-972034

[36] Infrared conductivity of metallic (III,Mn)V ferromagnets [J].

Sinova, J ;

Jungwirth, T ;

Yang, SRE ;

Kucera, J ;

MacDonald, AH .

PHYSICAL REVIEW B, 2002, 66 (04) :412021-412024

[37] Intervalenceband and plasmon optical absorption in heavily doped GaAs:C [J].

Songprakob, W ;

Zallen, R ;

Tsu, DV ;

Liu, WK .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :171-177

[38] Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature -: art. no. 201303 [J].

Yu, KM ;

Walukiewicz, W ;

Wojtowicz, T ;

Kuryliszyn, I ;

Liu, X ;

Sasaki, Y ;

Furdyna, JK .

PHYSICAL REVIEW B, 2002, 65 (20) :1-4

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