Infrared probe of the insulator-to-metal transition in Ga1-xMnxAs and Ga1-xBexAs

被引：26

作者：

Chapler, B. C. ^{[1
]}

Myers, R. C. ^{[2
]}

Mack, S. ^{[3
]}

Frenzel, A. ^{[1
]}

Pursley, B. C. ^{[1
]}

Burch, K. S. ^{[4
,5
]}

Singley, E. J. ^{[6
]}

Dattelbaum, A. M. ^{[7
]}

Samarth, N. ^{[8
]}

Awschalom, D. D. ^{[3
]}

Basov, D. N. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

[3] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

[4] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

[5] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada

[6] Calif State Univ E Bay, Dept Phys, Hayward, CA 94542 USA

[7] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[8] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

PHYSICAL REVIEW B | 2011年 / 84卷 / 08期

基金：

美国国家科学基金会;

关键词：

MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; TEMPERATURE; SPECTRA; BAND;

D O I：

10.1103/PhysRevB.84.081203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or nonmagnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga1-xMnxAs, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be-doped samples, however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

引用

页数：4

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