Investigation of Structural and Optical Properties of ZnO Thin Films Grown on Different Substrates by Mist-CVD Enhanced with Ozone Gas Produced by Corona Discharge Plasma

被引:4
|
作者
Kutlu-Narin, Ece [1 ]
Narin, Polat [2 ,3 ]
Lisesivdin, Sefer Bora [2 ]
Sarikavak-Lisesivdin, Beyza [2 ]
机构
[1] Ankara Univ, Fac Engn, Dept Phys Engn, TR-06100 Ankara, Turkey
[2] Gazi Univ, Fac Sci, Dept Phys, TR-06500 Ankara, Turkey
[3] Ankara Yildirim Beyazit Univ, Applicat & Res Ctr, AYBU Cent Res Lab, TR-06010 Ankara, Turkey
关键词
PHOTOLUMINESCENCE PROPERTIES; PYRAMIDS; HYDROGEN; LIGHT;
D O I
10.1155/2021/1130829
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This study focuses on the growth and physical properties of ZnO thin films on different substrates grown by mist-CVD enhanced with ozone (O-3) gas produced by corona discharge plasma using O-2. Here, O-3 is used to eliminate the defects related to oxygen in ZnO thin films. ZnO thin films are grown on amorphous soda-lime glass (SLG) and single crystals SiO2/Si (100) and c-plane Al2O3 substrates at 350 degrees C of low growth temperature. All ZnO thin films show dominant (0002) diffraction peaks from X-ray diffraction (XRD). As expected, full width at half maximum (FWHM) of (0002) is decreasing in ZnO thin films on single-crystal substrates, especially c-Al2O3 due to similar crystal structure. It is found that the strain in the films is lowest in ZnO/c-Al2O3. The surface morphologies of the thin films are studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. Grown ZnO films have a hexagonal and triangular nanostructure with different nanostructure sizes depending on the used substrate types. The calculated surface roughness is dramatically decreased in ZnO/c-Al2O3 compared to the other grown structures. The confocal Raman measurements show the E-2(H) peak of ZnO thin films at 437 cm(-1). It is suggested that O-3 gas produced by corona discharge plasma using O-2 can be useful to obtain better crystal quality and physical properties in ZnO thin films.
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页数:8
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