In situ conductance of Fe/Si and Fe/Ge multilayers

被引：6

作者：

Chomiuk, P. ^{[1
]}

Wroblewski, M. ^{[2
]}

Blaszyk, M. ^{[1
]}

Lucinski, T. ^{[1
]}

Susla, B. ^{[2
]}

机构：

[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland

[2] Poznan Univ Tech, Inst Phys, Fac Tech Phys, PL-60965 Poznan, Poland

来源：

ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.113.657

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Cc) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.

引用

页码：657 / 662

页数：6

共 6 条

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