Ultrafast carrier dynamics in nitrogen containing GaAs

被引：0

作者：

Dekorsy, T ^{[1
]}

Sinning, S ^{[1
]}

Helm, M ^{[1
]}

Mussler, G ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Forschungszentrum Rossendorf, D-01314 Dresden, Germany

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the analysis of the carrier dynamics in GaNAs by femtosecond pump-probe spectroscopy at different wavelengths. GaNAs with dilute N concentrations below 2% are prepared by ion implantation and NME growth. The implanted and annealed samples reveal carrier dynamics dominated by traps, while in the MBE grown samples distinct relaxation dynamics are observed which are associated with the modified band structure.

引用

页码：235 / 236

页数：2

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