Characterization of Semiconductor Nanowires Using Optical Tweezers

被引：77

作者：

Reece, Peter J. ^{[1
]}

Toe, Wen Jun ^{[1
]}

Wang, Fan ^{[1
]}

Paiman, Suriati ^{[2
,3
]}

Gao, Qiang ^{[2
]}

Tan, H. Hoe ^{[2
]}

Jagadish, C. ^{[2
]}

机构：

[1] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[3] Univ Putra Malaysia, Dept Phys, Fac Sci, Serdang 43400, Selangor, Malaysia

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

基金：

澳大利亚研究理事会;

关键词：

Semiconductor nanowires; optical tweezers; Brownian motion; nanoparticle metrology; TRAPS;

D O I：

10.1021/nl200720m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (+/- 6) nm in diameter and 2-15 mu m in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through Brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires.

引用

页码：2375 / 2381

页数：7

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