Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates

被引：98

作者：

Chakraborty, A

Baker, TJ ^{[1
]}

Haskell, BA

Wu, F

Speck, JS

Denbaars, SP

Nakamura, S

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, UCSB Grp, JST, ERATO, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 28-32期

关键词：

semipolar; InGaN; multiple-quantum well (MQW); light-emitting diode (LED); electroluminescence (EL);

D O I：

10.1143/JJAP.44.L945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of semipolar Group-III nitrides based devices offers a means of reducing the deleterious effects of the polarization-induced electric fields present in the polar quantum wells. We report on the fabrication of blue InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on semipolar (10<1)over bar>) and (10 (13) over bar) oriented GaN templates. A maximum on-wafer continuous wave output power of 190 mu W was measured at 20 mA for 300 x 300 mu m(2) devices, and output power as high as 1.53 mW was measured at 250 mA. Drive-current independent electroluminescence peak at 439 nm was observed for the LEDs grown on both the planes. The current-voltage characteristics of these LEDs showed rectifying behavior with a forward voltage of 3-4 Vat 20 mA.

引用

页码：L945 / L947

页数：3

共 16 条

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