Two Signal Power Level Design for Shunt-Connected Type GaN HEMT Doherty Power Amplifier without a Quarter-Wave Inverter

被引：0

作者：

Iguchi, Yosuke ^{[1
]}

Takayama, Yoichiro ^{[1
]}

Ishikawa, Ryo ^{[1
]}

Honjo, Kazuhiko ^{[1
]}

机构：

[1] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

Doherty amplifier; Microwave power amplifier; GaN HEMT; broadband power amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1.9-GHz shunt-connected-type GaN HEMT Doherty power amplifier without a quarter-wave inverting network is designed and fabricated by introducing a two-RF-level circuit design procedure. Matching circuits for the carrier and peaking amplifiers are designed to realize optimum efficiency at low-RF (peaking amplifier off) and high-RF (saturated) signal levels. The compact amplifier achieved a maximum power added efficiency (PAE) higher than 50% at the 310-MHz bandwidth. The maximum PAE at an output power above 30 dBm was higher than 50% within the 1.68-1.99 GHz frequency range. A PAE higher than 40% at a 6-dB back-off from input power achieving maximum PAE was obtained over a wide frequency range of 1.67-1.99 GHz.

引用

页码：1004 / 1006

页数：3

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