Silicon quantum dot nanostructures for tandem photovoltaic cells

被引：346

作者：

Conibeer, Gavin ^{[1
]}

Green, Martin ^{[1
]}

Cho, Eun-Chel ^{[1
]}

Koenig, Dirk ^{[1
]}

Cho, Young-Hyun ^{[1
]}

Fangsuwannarak, Thipwan ^{[1
]}

Scardera, Giuseppe ^{[1
]}

Pink, Edwin ^{[1
]}

Huang, Yidan ^{[1
]}

Puzzer, Tom ^{[1
]}

Huang, Shujuan ^{[1
]}

Song, Dengyuan ^{[1
]}

Flynn, Chris ^{[1
]}

Park, Sangwook ^{[1
]}

Hao, Xiaojing ^{[1
]}

Mansfield, Daniel ^{[1
]}

机构：

[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 20期

关键词：

quantum dots; thin film; third generation; quantum confinement;

D O I：

10.1016/j.tsf.2007.12.096

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tandem PV cells - with their increased efficiency due to a multi-band gap approach - usually involve expensive materials and fabrication. Thin film approaches, with an engineered variation in band gap through the use of quantum confinement in Si quantum dots, offer a cheaper alternative. Presented are characterisation and modelling data on fabrication of such Si and Sri QD nanostructures in various dielectric matrices by self-organised thin film deposition, with demonstrated confined energy levels of 1.7 eV for 2 nm diameter QDs. This being the optimum energy for an upper tandem cell element. (c) 2008 Elsevier B.V All rights reserved.

引用

页码：6748 / 6756

页数：9

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