Valley-kink in bilayer graphene at ν=0: A charge density signature for quantum Hall ferromagnetism
被引:11
作者:
Huang, Chia-Wei
论文数: 0引用数: 0
h-index: 0
机构:
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
Huang, Chia-Wei
[1
]
Shimshoni, Efrat
论文数: 0引用数: 0
h-index: 0
机构:
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, IsraelBar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
Shimshoni, Efrat
[1
]
论文数: 引用数:
h-index:
机构:
Fertig, H. A.
[2
]
机构:
[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[2] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA
来源:
PHYSICAL REVIEW B
|
2012年
/
85卷
/
20期
基金:
美国国家科学基金会;
关键词:
BERRYS PHASE;
D O I:
10.1103/PhysRevB.85.205114
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We investigate interaction-induced valley domain walls in bilayer graphene in the nu = 0 quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a double-gated suspended sample, where the electric field changes sign across a line in the middle. The noninteracting energy spectrum of the ground state is characterized by a sharp domain wall between two valley-polarized regions. Using the Hartree-Fock approximation, we find that the Coulomb interaction opens a gap between the two lowest-lying states near the Fermi level, yielding a smooth domain wall with a kink configuration in the valley index. Our results suggest the possibility to visualize the domain wall via measuring the charge density difference between the two graphene layers, which we find exhibits a characteristic pattern. The width of the kink and the resulting pattern can be tuned by the interplay between the magnetic field and the gate electric fields.