Performance and system-on-chip integration of an unmodified CMOS ISFET

被引：23

作者：

Hammond, PA ^{[1
]}

Cumming, DRS ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 111卷

关键词：

CMOS; ISFET; drift; system-on-chip;

D O I：

10.1016/j.snb.2004.12.065

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

An ISFET fabricated by an unmodified, commercial CMOS process displays significant threshold voltage drift, which is attributed to the diffusion of hydrogen ions into the passivation layer. A 'stretched-exponential' model can compensate for the drift and produce a useful device with a sensitivity of 48 mV/pH. The CMOS ISFET has been used to create a complete 'system-on-chip' digital pH meter, capable of real-time drift compensation. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：254 / 258

页数：5

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