Improved electrochemical properties of patterned Si film electrodes

被引：12
作者：
Cho, Gyu-bong
Noh, Jung-pil
Sung, Ho-jin
Choi, Si-young
Lee, Sang-hun
Ahn, Hyo-jun
Nam, Tae-hyun
Kim, Ki-won [1 ]
机构：
[1] Gyeongsang Natl Univ, Sch Mat Sci & Engn, Jinju 660701, Gyeongnam, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2012年 / 89卷
关键词：
Patterned electrode; Silicon film; Stress; Anode; NEGATIVE ELECTRODE; AMORPHOUS-SILICON; ION BATTERIES; DEPOSITION; NI;
D O I：
10.1016/j.mee.2011.03.141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Patterned Si films (electrodes) on flat and rough substrates were fabricated by masking with an expanded metal foil during film deposition. Their electrochemical properties and structural stability during charge-discharge process were examined and compared with each other. The patterned Si film fabricated on the rough substrate (rough electrode) exhibited the improved cycleability (91% of capacity retention after 100 cycles) and the enhanced structural stability compared to the patterned Si film fabricated on the flat substrate (flat electrode). After 50 cycles, some cracks were generated at Si tile in the flat electrode, whereas any structural damages were not observed at the rough electrode. The good electrochemical performance of the rough electrode was attributed to the space between Si tiles and the enhanced structural stability of electrode. (C) 2011 Elsevier B.V. All rights reserved.
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收藏
页码：104 / 108
页数：5
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