A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension

被引：68

作者：

Sung, Woongje ^{[1
]}

Baliga, B. J. ^{[2
]}

机构：

[1] SUNY Polytech Inst, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] North Carolina State Univ, PowerAmer Inst, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 12期

关键词：

Silicon carbide; 4H-SiC; edge termination; junction termination extension; floating field rings; 4H SILICON-CARBIDE; DIODES;

D O I：

10.1109/LED.2016.2623423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a new edge termination technique named a hybrid junction termination extension (Hybrid-JTE), which combines ring-assisted JTE and multiple floating zone JTE. Based on the parameters of the drift layer specified by the wafer vendor, the measured breakdown voltage of the fabricated p-i-n diode using the Hybrid-JTE is as high as 5450 V, which is close (similar to 99%) of the ideal parallel plane p-n junction. Furthermore, measured breakdown voltages from randomly chosen 32 p-i-n diodes across the wafer show very tight distribution: 29 diodes provide breakdown voltages higher than 5000 V at 100 mu A.

引用

页码：1609 / 1612

页数：4

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