Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

被引：17
|
作者：
Shin, SH
Shin, JH
Park, KJ
Ishida, T
Tabata, O
Kim, HH [1 ]
机构：
[1] Doowon Tech Coll, Kyeonggi Do, South Korea
[2] Natl Inst Technol & Qual, Kwachun City, South Korea
[3] Osaka Natl Res Inst, Ikeda, Osaka 563, Japan
来源：
THIN SOLID FILMS | 1999年 / 341卷 / 1-2期
关键词：
indium tin oxide; magnetron sputtering; resistivity;
D O I：
10.1016/S0040-6090(98)01531-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium tin oxide (ITO) thin films are prepared on soda lime glass by a DC magnetron sputtering technique having the unbalanced-magnet structure to escape from surface damages. The material properties are measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a result, the (400) peak as the preferred orientation of [100] direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness and film uniformity with a increase of substrate temperature is improved. The best resistivity is 1.3 x 10(-4) Ohm cm on the position of 4 cm from substrate center. Hall mobility and carrier concentration of the ITO thin films are increased with a rising of temperature. The visible light transmission is around 85% at ITO films of 550 nm thickness. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：225 / 229
页数：5
相关论文
共 50 条
  • [41] Indium tin oxide films deposited by thermionic-enhanced DC magnetron sputtering on unheated polyethylene terephthalate polymer substrate
    Lan, Y. F.
    Peng, W. C.
    Lo, Y. H.
    He, J. L.
    MATERIALS RESEARCH BULLETIN, 2009, 44 (08) : 1760 - 1764
  • [42] Effect of tin doping on the properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering
    Yang, Chih-Hao
    Lee, Shih-Chin
    Lin, Tien-Chai
    Zhuang, Wen-Yan
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 138 (03): : 271 - 276
  • [43] Growth and characterization of indium-tin-oxide films by energy filtered DC magnetron sputtering
    Yao N.
    Chang L.
    Han C.
    Xing H.
    Ge Y.
    Cui N.
    Wang Y.
    Zhang B.
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2011, 31 (03): : 278 - 282
  • [44] Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering
    Tikhii, A. A.
    Sviridova, E. A.
    Zhikhareva, Y. I.
    Zhikharev, I. V.
    ACTA PHYSICA POLONICA A, 2024, 145 (01) : 67 - 70
  • [45] Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature
    Li, G. F.
    Zhou, J.
    Huang, Y. W.
    Yang, M.
    Feng, J. H.
    Zhang, Q.
    VACUUM, 2010, 85 (01) : 22 - 25
  • [46] Growth and characterization of indium tin oxide films grown on polymer substrates by DC magnetron sputtering
    Bhaumik, S
    Barua, AK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6A): : 3619 - 3620
  • [47] Influence of dc magnetron sputtering parameters on surface morphology of indium tin oxide thin films
    Jung, YS
    Lee, DW
    Jeon, DY
    APPLIED SURFACE SCIENCE, 2004, 221 (1-4) : 136 - 142
  • [48] Optimization of Sputtering Parameters for the Deposition of Low Resistivity Indium Tin Oxide Thin Films
    Yasrebi, Navid
    Bagheri, Behrang
    Yazdanfar, Payam
    Rashidian, Bizhan
    Sasanpour, Pezhman
    ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2014, 27 (02) : 324 - 330
  • [49] Optimization of Sputtering Parameters for the Deposition of Low Resistivity Indium Tin Oxide Thin Films
    Navid Yasrebi
    Behrang Bagheri
    Payam Yazdanfar
    Bizhan Rashidian
    Pezhman Sasanpour
    ActaMetallurgicaSinica(EnglishLetters), 2014, 27 (02) : 324 - 330
  • [50] Optimization of Sputtering Parameters for the Deposition of Low Resistivity Indium Tin Oxide Thin Films
    Navid Yasrebi
    Behrang Bagheri
    Payam Yazdanfar
    Bizhan Rashidian
    Pezhman Sasanpour
    Acta Metallurgica Sinica (English Letters), 2014, 27 : 324 - 330
12345