Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

被引：17
|
作者：
Shin, SH
Shin, JH
Park, KJ
Ishida, T
Tabata, O
Kim, HH [1 ]
机构：
[1] Doowon Tech Coll, Kyeonggi Do, South Korea
[2] Natl Inst Technol & Qual, Kwachun City, South Korea
[3] Osaka Natl Res Inst, Ikeda, Osaka 563, Japan
来源：
THIN SOLID FILMS | 1999年 / 341卷 / 1-2期
关键词：
indium tin oxide; magnetron sputtering; resistivity;
D O I：
10.1016/S0040-6090(98)01531-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium tin oxide (ITO) thin films are prepared on soda lime glass by a DC magnetron sputtering technique having the unbalanced-magnet structure to escape from surface damages. The material properties are measured by the X-ray diffraction meter (XRD) and atomic force microscopy (AFM) scanning. As a result, the (400) peak as the preferred orientation of [100] direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness and film uniformity with a increase of substrate temperature is improved. The best resistivity is 1.3 x 10(-4) Ohm cm on the position of 4 cm from substrate center. Hall mobility and carrier concentration of the ITO thin films are increased with a rising of temperature. The visible light transmission is around 85% at ITO films of 550 nm thickness. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：225 / 229
页数：5
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