LDMOS Transistor High-Frequency Performance Enhancements by Strain

被引：12

作者：

Chen, Kun-Ming ^{[1
]}

Huang, Guo-Wei ^{[1
,2
]}

Chen, Bo-Yuan ^{[1
]}

Chiu, Chia-Sung ^{[1
]}

Hsiao, Chih-Hua ^{[1
]}

Liao, Wen-Shiang ^{[3
]}

Chen, Ming-Yi ^{[4
]}

Yang, Yu-Chi ^{[4
]}

Wang, Kai-Li ^{[4
]}

Liu, Chee Wee ^{[1
,5
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 30078, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Hubei Univ, Fac Phys & Elect Technol, Wuhan 430062, Peoples R China

[4] United Microelect Corp, Hsinchu 300, Taiwan

[5] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

关键词：

Annular layout; biaxial tensile strain; cutoff frequency; laterally diffused MOS (LDMOS); mechanical stress; SILICON;

D O I：

10.1109/LED.2011.2182494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency (f(T)) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the f(T) enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the f(T) variations.

引用

页码：471 / 473

页数：3

共 15 条

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